View XP1058-BD_4770694.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD Chip Device Layout
Features
5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept 100% On-Wafer DC, RF and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
XP1058-BD
General Description
Mimix Broadband's four stage 14.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings1
Supply Voltage (Vd) Supply Current (Id1,2,3,4) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+8.0 VDC 200,400,800,2200 mA +0.3 VDC +30.0 dBm -65 to +165 C -55 to +85 C 175 C
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21)2 Gain Flatness (delta S21) Reverse Isolation (S12) Output Power for 1dB Compression Point (P1dB) Output Third Order Intermods (OIP3) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id1) (Vd=8.0 V,Vg=-0.8 V Typical) Supply Current (Id2) (Vd=8.0 V, Vg=-0.8 V Typical) Supply Current (Id3) (Vd=8. 0 V, Vg=-0.8 V Typical) Supply Current (Id4) (Vd=8.0 V, Vg=-0.8 V Typical)
(2) Measured on wafer pulsed.
2
Units GHz dB dB dB dB dB dBm dBm dBm VDC VDC mA mA mA mA
Min 14.5 -1.5 -
Typ 10.0 10.0 27.0 +/-1.0 60.0 +36.0 +46.0 +37.0 +7.5 -0.8 125 250 500 1350
Max 16.0 +7.8 0.0 150 300 600 1650
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
XP1058-BD, Vd=4.0 V, Vg=-1.1 V, Id1=81 mA Id2=165 mA, Id3=323 mA, Id4=805 mA
30 20 10 0 -10
Power Amplifier Measurements (On-Wafer1)
XP1058-BD, Vd=4.0 V, Vg=-1.1 V, Id1=81 mA Id2=165 mA, Id3=323 mA, Id4=805 mA
27 26 25 24
Gain (dB)
Gain (dB)
23 22 21 20 19 18 17 13.0
-20 -30 -40 -50 -60 -70 -80
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
-90 10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
Frequency (GHz)
XP1058-BD, Vd=4.0 V, Vg=-1.1 V, Id1=81 mA Id2=165 mA, Id3=323 mA, Id4=805 mA
0 0
XP1058-BD, Vd=4.0 V, Vg=-1.1 V, Id1=81 mA Id2=165 mA, Id3=323 mA, Id4=805 mA
-5
-5
-10
Input Return Loss (dB)
13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0
Input Return Loss (dB)
-10
-15
-15
-20
-20
-25
-25
-30 13.0
-30 10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
Frequency (GHz)
XP1058-BD, Vd=4.0 V, Vg=-1.1 V, Id1=81 mA Id2=165 mA, Id3=323 mA, Id4=805 mA
0 0
XP1058-BD, Vd=4.0 V, Vg=-1.1 V, Id1=81 mA Id2=165 mA, Id3=323 mA, Id4=805 mA
Output Return Loss (dB)
-10
Output Return Loss (dB)
13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0
-5
-5
-10
-15
-15
-20
-20
-25 13.0
-25 10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements - On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional information see the Mimix "T-Pad Transition" application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
XP1058-BD, Vd=8.0 V, Vg=Varied, Freq=15 GHz Pulsed, Single Tone into 50+j0
Power Amplifier Measurements (On-Wafer1) (cont.)
XP1058-BD, Vd=8.0 V, Vg=Varied, Freq=14 GHz Pulsed, Single Tone into 50+j0
40 38 36 34 32 30 28 26 24 22 20 18 16 14 -10 -5 0 5 10 15 20 Pout (Gain), Vg = -1.2 V Pout (Gain), Vg = -1.1 V
40 38 36
Pout (dBm), Gain (dB)
Pout (dBm), Gain (dB)
Pout (Gain), Vg = -1.0 V Pout (Gain), Vg = -0.9 V
34 32 30 28 26 24 22 20 18 -10 -5 0 5 10 15 20 Pout (Gain), Vg = -1.2 V Pout (Gain), Vg = -1.1 V Pout (Gain), Vg = -1.0 V Pout (Gain), Vg = -0.9 V
40 38 36
XP1058-BD, Vd=8.0 V, Vg=Varied, Freq=16 GHz Pulsed, Single Tone into 50+j0
40 35
XP1058-BD, Vd=8.0 V, Vg=Varied, Freq=15 GHz Pulsed, Single Tone into 50+j0
Pout (dBm), Gain (dB)
PAE (%) and PDC (W)
34 32 30 28 26 24 22 20 18 -10 -5 0 5 10 15 20 Pout (Gain), Vg = -1.2 V Pout (Gain), Vg = -1.1 V Pout (Gain), Vg = -1.0 V Pout (Gain), Vg = -0.9 V
30 25 20 15 10 5 0 -5 0 5 10 15 20 PAE (PDC), Vg = -1.2 V PAE (PDC), Vg = -1.1 V PAE (PDC), Vg = -1.0 V PAE (PDC), Vg = -0.9 V
XP1058-BD, Vd=8.0 V, Vg=Varied Pulsed into 50 + j0, 85 deg C backplate
40 39 38 37 36 35 34 33 32 31 30 13.0 Vg = -1.1 V Vg = -1.0 V Vg = -0.9 V Vg = -0.8 V Vg = -0.7 V Vg = -0.6 V 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
Note [1] Measurements - On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional information see the Mimix "T-Pad Transition" application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
XP1058-BD, Vd=Varied, Vg=-0.8 V
32 31 30 29
Power Amplifier Measurements (Text Fixture1)
XP1058-BD, Vd=8.0 V, Vg=-0.8 V
30 29 28 27
Gain (dB)
26 25 24 23 22 21 20 13.0
Gain (dB)
28 27 26 25 24 23 22 13.0 Untuned
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
Frequency (GHz)
Vd_5V Vd_6V Vd_7V Vd_8V
40 39
XP1058-BD, Vd=8.0 V, Vg=-0.8 V
47
XP1058-BD, Vd=8.0 V, Vg=-0.8 V delta F=10 MHz
Output Third Order Intercept (dBm)
Output Power Psat (dBm)
38 37 36 35 34 33 32 31 30 13.0
46 45 44 43 42 41 40 39 38 37 14.0 18dBm, Pout SCL 20dBm, Pout SCL 22dBm, Pout SCL 24dBm, Pout SCL
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
XP1058-BD, Vd=8.0 V, Vg=-0.8 V
0.0
0.0
XP1058-BD, Vd=8.0 V, Vg=-0.8 V
-5.0
-5.0
-10.0
Output Return Loss (dB)
13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
Input Return Loss (dB)
-10.0
-15.0
-15.0
-20.0
-20.0
-25.0 13.0
-25.0 13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements - Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
XP1058-BD, Vd=7.5 V, Vg=-1.0 V
40 39
Power Amplifier Measurements (Text Fixture1) (cont.)
38 36
XP1058-BD, Vd=7.5 V, Vg=-1.0 V
32
Output Power Psat (dBm)
34
38 37 36 35 34 33 32 31 30 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
Gain (dB)
30
28 26 24 22 20 18 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
Frequency (GHz)
+85 Deg C, Id=1568 mA -40 Deg C, Id=2011 mA +25 Deg C, Id=1748 mA +85 Deg C, Id=1568 mA
Frequency (GHz)
-40 Deg C, Id=2011 mA +25 Deg C, Id=1748 mA
XP1058-BD, Vd=7.5 V, Vg=-1.0 V
40
e Output Third Orde r Intercept (dBm)
51 50 49 48 47 46 45 44 43 42 41 40
XP1058-BD, Vd=7.5 V, Vg=-1.0 V, Pout=+20 dBm/tone
39 r Output Power P1dB (dBm) 38 37 36 35 34 33 32 31 30 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
39 13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
+85 Deg C, Id=1568 mA -40 Deg C, Id=2011 mA +25 Deg C, Id=1748 mA
+85 Deg C Id 1568 mA 85 D C, Id=1568 A
Frequency (GHz)
-40 D C Id 2011 mA 40 Deg C, Id=2011 A +25 Deg C Id 1748 mA 25 D C, Id=1748 A
0 -5 -10 -15
-20 -25 -30 13.5
XP1058-BD, Vd=7.5 V, Id=1748 mA
0
XP1058-BD, Vd=7.5 V, Id=1748 mA
Input Return Loss (dB)
-5 u Output Ret rn Loss (dB) 14.0 14.5 15.0 15.5 16.0 16.5 17.0
-10
-15
-20
-25 13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
+85 Deg C -40 Deg C +25 Deg C +85 Deg C
Frequency (GHz)
-40 Deg C +25 Deg C
Note [1] Measurements - Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
XP1058-BD, Vd=Varied, Id=Varied, DC Power=13 W
40 39
Power Amplifier Measurements (Text Fixture1) (cont.)
34 33
XP1058-BD, Vd=Varied, Id=Varied, DC Power=13 W
31
Output Power Psat (dBm) r
14.0 14.5 15.0 15.5 16.0 16.5 17.0
32
38 37 36 35 34 33 32 31 30 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
Gain (dB)
30 29
28 27 26 25 24 13.5
Frequency (GHz)
Vd=6.0 V, Id=2187 mA Vd=7.0 V, Id=1868 mA Vd=6.5 V, Id=2017 mA Vd=7.5 V, Id=1749 mA
Frequency (GHz)
Vd=6.0 V, Id=2187 mA Vd=7.0 V, Id=1868 mA Vd=6.5 V, Id=2017 mA Vd=7.5 V, Id=1749 mA
Output Third Order Intercept (dBm)
40 39
XP1058-BD, Vd=Varied, Id=Varied, DC Power=13 W
51 50 49 48 47 46 45 44 43 42 41 40 39 13.5
XP1058-BD, Vd=Varied, Id=Varied, Pout=+20 dBm/tone
Output Power P1dB (dBm)
38 37 36 35 34 33 32 31 30 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
Vd=6.0 V, Id=2187 mA Vd=7.0 V, Id=1868 mA Vd=6.5 V, Id=2017 mA Vd=7.5 V, Id=1749 mA
Frequency (GHz)
Vd=6.0 V, Id=2187 mA Vd=7.0 V, Id=1868 A Vd 7 0 V Id 1868 mA Vd=6.5 V, Id=2017 mA Vd=7.5 V, Id=1749 A Vd 7 5 V Id 1749 mA
51
XP1058-BD, Vd=6.0 V, Id=2193 mA, DC Power=13 W
Output Third Order Intercept (dBm)
51 50 49 48 47 46 45 44 43 42 41 40 39
XP1058-BD,Vd=7.5 V, Id=1758 mA, DC Power=13W
Output Third Order Intercept (dBm)
50 49 48 47 46
45 44 43 42 41 40 39 18 19 20 21 22 23 24 25 26
13.5 GHz 14.0 GHz
14.5 14 5 GHz 15.0 GHz 15.5 GHz 16.0 GHz 16.5 GHz
13.5 GHz 14.0 GHz 14.5 14 5 GHz 15.0 GHz 15.5 GHz 16.0 GHz 16.5 GHz
18
19
20
21
22
23
24
25
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Note [1] Measurements - Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
XP1058-BD, Vd=7.5 V, Id=Varied, Freq=14.5 GHz
Power Amplifier Measurements (Text Fixture1) (cont.)
40 39
XP1058-BD, Vd=7.5 V, Id=Varied
51
Output Third Order Intercept (dBm)
50 49 48 47 46 45 44 43 42 41 40 39 18 19 20 21 22 23 24 25 26
Output Power P1dB (dBm)
38 37 36 35 34 33 32 31 30 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
Frequency (GHz)
Vg=-0.8 V, Id=2926 mA Vg=-1.0 V, Id=2043 mA Vg=-0.9 V, Id=2494 mA Vg=-1.1 V, Id=1597 mA
Output Power per Tone
Vg=-0.8 V, Id=2926 mA Vg=-1.0 V, Id=2043 mA Vg=-0.9 V, Id=2494 mA Vg=-1.1 V, Id=1597 mA
51
XP1058-BD, Vd=7.5 V, Id=Varied, Freq=15.0 GHz
Output Third Order Intercept (dBm)
51 50 49 48 47 46 45 44 43 42 41 40 39 18
XP1058-BD, Vd=7.5 V, Id=Varied, Freq=15.5 GHz
Output Third Order Intercept (dBm)
50 49 48 47 46 45
44 43 42 41 40 39 18 19 20 21 22 23 24 25 26
19
20
21
22
23
24
25
26
Output Power per Tone
Vg=-0.8 V, Id=2926 mA Vg=-1.0 V, Id=2043 Vg 1 0 V Id 2043 mA Vg=-0.9 V, Id=2494 mA Vg=-1.1 V, Id=1597 Vg 1 1 V Id 1597 mA
Output Power per Tone
Vg=-0.8 V, Id=2926 mA Vg=-1.0 V, Vg= 1 0 V Id=2043 mA Vg=-0.9 V, Id=2494 mA Vg=-1.1 V, Vg= 1 1 V Id=1597 mA
40 39
XP1058-BD, Vd=Varied, Id=Varied, DC Power=13W Pulsed, 1ms period, 10us width
38 36 34 32 PAE (%) 30 28 26 24 22 20 18 13.5
XP1058-BD, Vd=Varied, Id=Varied, DC Power=13W Pulsed, 1ms period, 10us width
Output Power Psat (dBm)
38 37 36 35
34 33 32 31 30 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Frequency (GHz)
Vd=6.0 V, Id=2187 mA Vd 7.0 Vd=7.0 V, Id=1868 mA Id 1868 Vd=6.5 V, Id=2017 mA Vd 7.5 Vd=7.5 V, Id=1749 mA Id 1749
Frequency (GHz)
Vd=6.0 V, Id=2187 mA Vd=7.0 V, Id=1868 mA Vd=6.5 V, Id=2017 mA Vd=7.5 V, Id=1749 mA
Note [1] Measurements - Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
S-Parameters (On Wafer1)
Typcial S-Parameter Data for XP1058-BD Vd=4.0 V, Id=1374 mA Frequency (GHz) 5.0 50 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 20 0 21.0 22.0 23.0 24.0 25.0 S11 (Mag) 0.976 0 976 0.973 0.971 0.966 0.958 0.948 0.926 0.883 0.799 0.534 0.067 0.171 0.226 0.318 0.442 0.543 0 543 0.657 0.750 0.810 0.859 0.892 S11 (Ang) -164.23 164 23 -173.52 179.18 170.76 161.54 152.50 139.46 121.45 98.52 55.68 42.81 84.87 49.69 3.32 -32.73 -53.31 -53 31 -71.20 -85.32 -95.30 -104.91 -112.73 S21 (Mag) 0.0002 0 0002 0.0002 0.0002 0.0003 0.0015 0.0073 0.0571 0.5447 3.0748 10.6495 16.1078 14.5228 9.6879 2.1303 0.0887 0.0061 0 0061 0.0015 0.0016 0.0023 0.0022 0.0023 S21 (Ang) 104.70 104 70 73.51 127.80 -162.59 151.35 94.90 24.39 -77.48 148.96 -38.65 122.65 -67.62 113.50 -118.24 75.07 0.41 0 41 73.63 115.86 94.97 70.03 8.47 S12 (Mag) 0.0001 0 0001 0.0000 0.0001 0.0002 0.0002 0.0002 0.0007 0.0005 0.0005 0.0002 0.0002 0.0003 0.0007 0.0009 0.0007 0.0011 0 0011 0.0012 0.0007 0.0019 0.0018 0.0022 S12 (Ang) 17.99 17 99 -177.51 45.00 153.60 -74.72 -140.46 178.80 122.01 49.95 15.58 60.05 173.95 174.84 175.63 165.17 161.86 161 86 89.59 100.40 71.95 58.73 -9.85 S22 (Mag) 0.966 0 966 0.921 0.904 0.890 0.878 0.862 0.829 0.724 0.459 0.135 0.316 0.397 0.276 0.675 0.889 0.930 0 930 0.945 0.952 0.955 0.958 0.960 S22 (Ang) -117.52 117 52 -129.98 -138.06 -146.67 -155.14 -162.99 -174.32 167.83 149.41 -173.06 -127.99 -132.31 -133.85 -96.76 -120.15 -131.09 -131 09 -138.96 -144.59 -148.26 -151.78 -154.86
Note [1] S-Parameters - On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
3.367 (0.133)
Mechanical Drawing
0.246 0.596 0.946 1.296 1.696 2.146 2.679 (0.010) (0.023) (0.037) (0.051) (0.067) (0.085) (0.105) 2.500 (0.098)
2
3
4
5
6
7
8
9
1.250 (0.049)
1
10
1.250 (0.049)
XP1058-BD
0.0
18
17
16
15
14
13
12
11 3.367 (0.133) 4.000 (0.157)
Bond Pad #1 (RF In) Bond Pad #2 (Vg1A) Bond Pad #3 (Vd1A) Bond Pad #4 (Vg2A) Bond Pad #5 (Vd2A) Bond Pad #6 (Vg3A) Bond Pad #7 (Vd3A) Bond Pad #8 (Vg4A) Bond Pad #9 (Vd4A) Bond Pad #10 (RFout) Bond Pad #11 (Vd4B) Bond Pad #12 (Vg4B) Bond Pad #13 (Vd3B) Bond Pad #14 (Vg3B) Bond Pad #15 (Vd2B) Bond Pad #16 (Vg2B) Bond Pad #17 (Vd1B) Bond Pad #18 (Vg1B)
0.0 0.246 0.596 0.946 1.296 1.696 2.146 2.679 (0.010) (0.023) (0.037) (0.051) (0.067) (0.085)(0.105)
(Note: Engineering designator is 15MPA1039) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.075 +/- 0.010 (0.0033 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Most DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF and Vg4, Vd3,4 Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 6.2 mg.
Bias Arrangement (See App Notes [1], [2] and [3])
Vg1
2 3 4 5
Vg2
6
Vg3
7
Vg4
Vd4
8
9
RF In
1
10 RF Out
XP1058-BD
18
17
16
15
14
13
12
11
Vd1
Vd2
Vd3 Vg4
Vd4
Layout for reference only - It is recommended to bias output stage from both sides.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 9 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd(1,2,3,4)=8.0V with Id1=125mA, Id2=250mA, Id3=500mA, and Id4=1350mA. Separate biasing is recommended if the amplifier is to be used in a linear application or at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=2225mA. [Linear Applications] - For applications where the amplifier is being used in linear
P1058-BD
operation, where best IM3 (Third-Order Intermod) performance is required at more than 5dB below P1dB, it is also recommended to use active gate biasing to keep the drain currents constant as the RF power and temperature vary; this gives the best performance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature.
[Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes significant. Note under this bias condition, gain will then vary with RF drive. NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance. CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3,4) is available before applying the positive drain supply (Vd1,2,3,4). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage. App Note [2] Bias Arrangement [For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass
capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads have been tied together on chip and device can be biased from either side. [For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF) are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance. App Note [3] Material Stack-Up - In addition to the practical aspects of bias and bias arrangement, device base
material stack-up also must be considered for best thermal performance. A well thought out thermal path solution will improve overall device reliability, RF performance and power added efficiency. The photo shows a typical high power amplifier carrier assembly. The material stack-up for this carrier is shown below. This stack-up is highly recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal properties, material availability and end application performance requirements.
MMIC, 3mil Diemat DM6030HK Epoxy, ~1mil MOLY Rib, 5mil, Au plated Alumina Substrate AuSn Eutectic Solder
MOLY Carrier, 25mil Au plated Copper Block
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 10 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information.
XP1058-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA Id3=500 mA, Id4=1350 mA
1.0E+06
1.00E+08
XP1058-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA Id3=500 mA, Id4=1350 mA
1.0E+05
1.00E+07
MTTF (hours)
1.0E+04
1.00E+06
1.0E+03
FITS
1.00E+05
1.0E+02
1.00E+04
1.0E+01 55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
1.00E+03 55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
6.3 6.2 6.1
XP1058-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA Id3=500 mA, Id4=1350 mA
250 240 230 220
XP1058-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA Id3=500 mA, Id4=1350 mA
Rth (deg C/W)
6.0 5.9 5.8 5.7 5.6 5.5 5.4 5.3 55.0 65.0 75.0 85.0 95.0 105.0 115.0 125.0
Tch (deg C)
210 200 190 180 170 160 150 55.0 65.0 75.0 85.0 95.0 105.0 115.0 125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 11 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
14.5-16.0 GHz GaAs MMIC Power Amplifier
January 2010 - Rev 04-Jan-10
P1058-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.075 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m K thermal conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering XP1058-BD-000V XP1058-BD-EV1
Description RoHS compliant die packed in vacuum release gel packs XP1058-BD evaluation module
Appropriate precautions in handling, packaging and testing devices must be observed.
Caution: ESD Sensitive
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 12 of 12
Characteristic Data and Specifications are subject to change without notice. (c)2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

▲Up To Search▲

Price & Availability of XP1058-BD

	To Download XP1058-BD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .